Features of common LED chips:

1、 MB chip

Definition: METAL BONDING chip; This chip belongs to UEC's patented product.

Features: 1. The material with high heat dissipation coefficient - SI is used as the substrate, and heat dissipation is easy.

2. Connect the WAFER BONDING epitaxial layer and the substrate through the metal layer, and reflect photons at the same time to avoid the absorption of the substrate.

3. The conductive SI substrate replaces the GAAS substrate and has good thermal conductivity (the thermal conductivity is 3-4 times different), which is more suitable for the field of high drive current.

4. The bottom metal reflective layer is conducive to the improvement of luminosity and heat dissipation

5. The size can be increased and applied to HIGH POWER field. ER: 42MIL MB

2、 GB chip

Definition: GLUE BONDING chip; This chip belongs to UEC's patented product

Features: 1. Transparent sapphire substrate replaces light absorbing GAAS substrate. Its light output power is more than twice that of traditional AS (ABSORABLE STRUCTURE) chips. The sapphire substrate is similar to the GAP substrate of TS chips.

2. The chip emits light on all sides and has excellent PATTERN

3. In terms of brightness, its overall brightness has exceeded the standard of TS chip (8.6mil)

4. Double electrode structure and its high temperature current resistance are slightly inferior to TS single electrode chip

3、 TS chip

Definition: transparent structure chip, which belongs to HP's patented product.

Features:

1. The chip process is complex and much higher than AS LED

2. Excellent reliability

3. Transparent GAP substrate, non light absorbing, high brightness

4、 AS chip

Definition: ABSORABLE STRUCTURE chip

Features: 1. Quad chip, prepared by MOVFE process, the brightness item is bright for conventional chips